Infineon IPB65R190CFD: Advanced 650V CoolMOS™ CFD2 Power Transistor for High-Efficiency Applications

The relentless pursuit of higher efficiency and power density in modern electronic systems demands continuous innovation in power semiconductor technology. Addressing this need, the Infineon IPB65R190CFD stands out as a premier 650V CoolMOS™ CFD2 power transistor engineered to set new benchmarks in performance for a wide range of high-efficiency applications.

This transistor is a part of Infineon's revolutionary CoolMOS™ CFD2 family, which represents a significant leap forward in superjunction (SJ) MOSFET technology. The "CFD" acronym stands for "Fast Switching Diode," a key differentiator that integrates an advanced body diode with exceptionally soft reverse recovery characteristics. This unique integration is pivotal for applications requiring hard commutation, as it dramatically reduces switching losses and minimizes electromagnetic interference (EMI). The result is a device that not only enhances overall system efficiency but also simplifies circuit design by reducing the need for additional snubber circuits or complex EMI filtering.

At the heart of the IPB65R190CFD is its impressive low nominal on-state resistance (R DS(on)) of just 190 mΩ. This exceptionally low resistance directly translates to reduced conduction losses, allowing for higher power throughput with less energy wasted as heat. Even at elevated temperatures, the device maintains stable performance, ensuring reliability under strenuous operating conditions. The combination of low switching and conduction losses makes it an ideal choice for high-frequency switching power supplies, where every percentage point of efficiency is critical.

The 650V voltage rating provides a robust safety margin for operation in universal mains applications (85 VAC to 305 VAC), making it exceptionally suitable for server and telecom power supplies, industrial SMPS, solar inverters, and EV charging infrastructure. Its high voltage robustness ensures resilience against line transients and spikes, enhancing system durability.

Furthermore, the IPB65R190CFD is designed with ease of use in mind. It features a low gate charge (Q G) which simplifies drive circuit design and allows for faster switching speeds using standard gate drive ICs. This contributes to higher power density, as designers can achieve more power in a smaller footprint.

ICGOOODFIND: The Infineon IPB65R190CFD CoolMOS™ CFD2 is a superior power transistor that masterfully combines high voltage capability, ultra-low losses, and an integrated fast recovery body diode. It is a cornerstone technology for engineers aiming to push the boundaries of efficiency, power density, and reliability in next-generation power conversion systems.

Keywords: CoolMOS™ CFD2, High-Efficiency, Low Switching Losses, 650V MOSFET, Fast Recovery Diode